DRAM Product Engineer/Sr.Engineer
Micron — Sanand - MIB - Mini Pioneer, India
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a DRAM Engineering Group (DEG) Product Engineer at Micron Technology, Inc., you will work with various Engineering and Manufacturing groups to improve DRAM yield, quality and throughput performance through electrical failure analysis (EFA) and data analysis, using your knowledge of DRAM circuits, operations and electrical testing methodology. Responsibilities and Tasks: Ensure product meets/exceeds all yield, quality, timeline commitments Debug, identify root causes, and develop solutions for failures through electrical failure analysis (EFA) and data analysis Develop, analyze, and optimize test flows in partnership with Test and Probe Protect customer experience by partnering with QA to address customer returns Perform risk assessment on material not meeting quality metrics Monitor yields and verify that yields meet projections Ensure that Silicon Meets Product Expectations Prioritize and identify opportunities for efficiency and technical improvements Technical Skillsets: Familiarity with DRAM operations and applications such as SSD and DIMMs Knowledge of logic gates and transistor operations Knowledge of semiconductor process Programming ability Personality: Self-motivated, proactive, with a strong sense of ownership Strong analytical and critical thinking skills Good interpersonal and communication skills Quick technical learner and passion to innovate Willing to speak out Qualification: Minimum bachelor's degree in electrical/Electronics/Computer Engineering or related disciplines Minimum 3+ Years of Experience expected to have. Environment: Office Flexible working arrangements About Micron Technology, Inc. We are an industry leader in innovative memory and
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